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 PD-2.450 rev. B 01/99
HEXFRED
Features
HFA200MD40C
Ultrafast, Soft Recovery Diode
VR = 400V VF (typ.) = 0.9V IF(AV) = 200A Qrr (typ.) = 330nC IRRM(typ.) = 8.1A trr(typ.) = 45ns di(rec)M/dt (typ.) = 270A/s
LUG LUG LUG TERMINAL TERMINAL TERMINAL CATHODE ANODE 2 ANODE 1
TM
Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters
Isolated Base
Description
HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.
TM
Absolute Maximum Ratings (per Leg)
Parameter
VR IF @ TC = 25C IF @ TC = 100C IFSM EAS PD @ T C = 25C PD @ TC = 100C TJ TSTG Cathode-to-Anode Voltage Continuous Forward Current Continuous Forward Current Single Pulse Forward Current Non-Repetitive Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range
TO-244AB (ISOLATED)
Max.
400 172 83 1200 1.4 278 111 -55 to +150
Units
V A mJ W C
Thermal - Mechanical Characteristics
Parameter
RthJC RthCS Wt Junction-to-Case, Single Leg Conducting Junction-to-Case, Both Legs Conducting Case-to-Sink, Flat , Greased Surface Weight Mounting Torque Terminal Torque Vertical Pull 2 inch Lever Pull
Min.
30 (3.4) 30 (3.4)
Typ.
0.10 79 (2.8)
Max.
0.45 0.23 40 (4.6) 40 (4.6) 80 35
Units
C/W K/W g (oz) lbfin (Nm) lbfin
Note: Limited by junction temperature L = 100H, duty cycle limited by max TJ 125C
Mounting surface must be smooth, flat, free or burrs or other protrusions. Apply a thin even film or thermal grease to mounting surface. Gradually tighten each mounting bolt in 5-10 lbfin steps until desired or maximum torque limits are reached. Module
1
HFA200MD40C
PD-2.450 rev. B 01/99
Electrical Characteristics (per Leg) @ TJ = 25C (unless otherwise specified)
Parameter
VBR V FM Cathode Anode Breakdown Voltage Max Forward Voltage
Min. Typ. Max. Units
400 1.0 1.2 1.2 1.4 0.9 1.1 2.0 12 3.0 16 370 500 5.0 V V A mA pF nH
Test Conditions
IR = 100A IF = 100A IF = 200A See Fig. 1 IF = 100A, TJ = 125C VR = VR Rated See Fig. 2 TJ = 125C, VR = 320V VR = 200V See Fig. 3 From top of terminal hole to mounting plane
IRM CT LS
Max Reverse Leakage Current Junction Capacitance Series Inductance
Dynamic Recovery Characteristics (per Leg) @ TJ = 25C (unless otherwise specified)
Parameter
trr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 di(rec)M /dt1 di(rec)M /dt2 Reverse Recovery Time
Min. Typ. Max. Units
45 81 260 8.1 17 330 2200 290 270 120 390 15 30 890 6000
Test Conditions
Peak Recovery Current Reverse Recovery Charge Peak Rate of Fall of Recovery Current During tb
I F = 1.0A, di f/dt = 200A/s, VR = 30V ns TJ = 25C See Fig. TJ = 125C 5 I F = 100A TJ = 25C See Fig. A TJ = 125C 6 VR = 200V TJ = 25C See Fig. nC TJ = 125C 7 dif/dt = 200A/s TJ = 25C See Fig. A/s TJ = 125C 8
80.01 (3.150) 40.26 (1.585) 39.75 (1.565)
20.32 (0.800) 17.78 (0.700)
7.49 (0.295) 6.99 (0.275) DIA. (2 PLCS.)
34.925 (1.375) REF. 63.50 (2.500) 60.96 (2.400)
LEAD ASSIGNMENTS 1 - ANODE 2 - CATHODE 3 - ANODE
1/4-20 SLOTTED HEX
1
23.55 (0.927) 20.42 (0.804)
2
3
OUTLINE TO-244AB (ISOLATED)
Dimensions in Millimeters and (Inches)
15.75 (0.620) 14.99 (0.590)
92.71 (3.650) 90.17 (3.550)
3.35 (0.132) 3.02 (0.119)
2
HFA200MD40C
1000
PD-2.450 rev. B 01/99
100000
Reverse Current - I R (A)
10000 1000 100 10 1 0.1 0
T = 150C J T = 125C J
Instantaneous Forward Current - IF (A)
100
TJ = 150C TJ = 125C TJ = 25C
TJ = 25C
100
200
300
400
Junction Capacitance - C T (pF)
10
Fig. 2 - Typical Reverse Current vs. Reverse Voltage, (per Leg)
10000
Reverse Voltage - VR (V)
A
TJ = 25C
1000
1 0.4
0.8
1.2
1.6
2.0
Forward Voltage Drop - V FM (V)
Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current, (per Leg)
100 1 10 100 1000
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage, (per Leg)
1
Thermal Impedance - Z thJC (K/W )
0.1
D = 0.50 D = 0.33 D = 0.25 D = 0.17
D = 0.08
P DM
0.01
Single Pulse (Thermal Resistance)
2 Notes: 1. Duty factor D = t / t 12
t 1 t
2. Peak TJ = PDM x Z thJC + TC
0.0001 0.001 0.01 0.1 1 10 100
0.001 0.00001
t 1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics, (per Leg)
3
HFA200MD40C
PD-2.450 rev. B 01/99
500
100
VR = 200V TJ = 125C TJ = 25C
400
VR = 200V TJ = 125C TJ = 25C IF = 200A
I F = 200A IF = 100A
I IRRM - (A)
t rr - (ns)
300
IF = 70A
I F = 100A
10
I F = 70A
200
100
0 100
di f /dt - (A/s)
1000
1 100
di f /dt - (A/s)
1000
Fig. 5 - Typical Reverse Recovery vs. dif/dt, (per Leg)
6000
Fig. 6 - Typical Recovery Current vs. dif/dt, (per Leg)
10000
VR = 200V TJ = 125C TJ = 25C
VR = 200V TJ = 125C TJ = 25C
IF = 200A
4000
Q RR - (nC)
I F = 100A I F = 70A
di(rec)M/dt - (A/s)
I F = 70A
1000
2000
IF = 100A
I F = 200A
0 100
Fig. 7 - Typical Stored Charge vs. di f/dt, (per Leg)
4
di f /dt - (A/s)
1000
100 100
Fig. 8 - Typical di (rec)M/dt vs. dif/dt, (per Leg)
di f /dt - (A/s)
1000
HFA200MD40C
3
PD-2.450 rev. B 01/99
IF
trr ta tb
4
REVERSE RECOVERY CIRCUIT
V R = 200V
0 Q rr I RRM
2
0.5 I RRM di(rec)M/dt 0.75 I RRM
5
0.01 L = 70H D.U.T. D IRFP250 S
1
di f /dt
4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr
dif/dt ADJUST G
1. dif /dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 IRRM extrapolated to zero current
Fig. 9 - Reverse Recovery Parameter Test Circuit
L = 100H HIGH-SPEED SWITCH Rg = 25 ohm CURRENT MONITOR FREE-WHEEL DIODE + Vd = 50V
Fig. 10 - Reverse Recovery Waveform and Definitions
I L(PK)
DUT
DECAY TIME V (AVAL) V R(RATED)
Fig. 11 - Avalanche Test Circuit and Waveforms
WORLD HEADQUARTERS: EUROPEAN HEADQUARTERS: IR CANADA: IR GERMANY: IR ITALY: IR FAR EAST: IR SOUTHEAST ASIA: IR TAIWAN:
233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332. Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408. 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801. Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933. Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220. K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086. 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630. 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936.
http://www.irf.com
Fax-On-Demand: +44 1883 733420
Data and specifications subject to change without notice.
5


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